ACCGE-23.OMVPE-21
Tucson, Arizona, USA
Fundamentals of crystal growth
(Ken Jackson session)
CHAIR:
Moneesh Upmanyu
Northeastern University
mupmanyu@northeastern.edu
Modeling of crystal growth processes
Invited speakers:
TBA
Session description:
A diverse range of technologies continue to rely on the understanding of science principles that govern crystal growth. In several instances, advances in these fundamental aspects are enablers for emerging industrial applications of crystalline materials, and for engineering biomimetic growth strategies at the intersection of nature and technology. In this symposium, we bring together leading experts from academia, government laboratories, and industry to present key advances in all aspects of crystal growth in a wide range of material systems. The symposium will consist of invited specialists, presentations, and poster sessions.
Topics of interest include (but are not limited to):
1) Fundamentals of nucleation and crystal growth
2) Bulk and thin film crystal growth, including aspects related to orientation/texture
3) Stress and morphological evolution during growth
4) Effect of impurities, surfaces, interfaces and related extended defects
5) Novel advances in growth of metals and alloys and ceramics,
6) Crystal growth at the nanoscale and low dimensional systems
7) Crystal growth of emerging active materials (topological insulators, quantum materials)
8) Data-enabled fundamental advances in crystal growth
9) Crystallization in soft (polymeric and biological) material systems
10) Experimental and characterization techniques for crystal growth (including ICME strategies)
11) Crystal growth via particulate and/or additive manufacturing techniques
Invited speakers:
TBA
Session description:
Mathematical analysis and computational modeling are essential tools of inquiry for fundamental issues in crystal growth as well as for the design, optimization, and control of crystal growth processes. This symposium encourages the submission of presentations that discuss the development of computational models and simulations, their implementation and application, and the new understanding that emerges. The scope of the symposium is intended to be broad and will span modeling at all length and time scales, ranging from quantum mechanical studies to classical molecular simulations to continuum techniques.
With the aim of emphasizing the cross-disciplinary nature of computational work, this symposium seeks to serve as a hub for modeling and simulation presentations submitted to other ACCGE/OMVPE symposia, where modeling results may be applied to advance the understanding of the materials or growth processes that are featured in that session. Papers discussing advances in modeling and simulation approaches and techniques are also encouraged and will grouped in the program according to their focus.
Bulk crystal growth
.jpg)
III-Vs on silicon
Invited speakers:
TBA
Session description:
This symposium will cover bulk crystal growth of a variety of materials from liquid and vapor phases. The topics of interest include, but are not limited to: melt growth, solution growth, physical vapor transport, and other bulk vapor grown techniques such as hydride vapor phase epitaxy (HVPE). Applications include, but are not limited to: semiconductors, detectors, laser host, and non-linear optical materials. The session is interested in papers related to crystal growth methods, innovative growth techniques, analysis of interface shape, the incorporation of impurities, characterization and elimination of defects, enhancements in size, properties and performance, fabrication techniques, and new materials. This cross-disciplinary session will provide an opportunity as a forum for business and academia to share research results and exchange ideas in bulk crystal growth.
Invited speakers:
-
Abderraouf Boucherif (Université de Sherbrooke), “Freestanding semiconductor nanomembranes: from materials to devices”
-
Ting Wang (Chinese Academy of Sciences), "Monolithically Integrated III-V Lasers for Silicon Photonics"
Session description:
The integration of III-V semiconductors on Si is a longstanding research goal of the optoelectronics community, with potential applications of high-efficiency multijunction solar cells, on-chip III-V lasers, and more. However, controlling the formation of defects such as threading dislocations, antiphase domains, and cracking associated with differences in material properties between III-Vs and Si can be challenging. This symposium welcomes all work addressing the integration of III-Vs (including zincblende and nitrides) on Si, including epitaxy, bonding, characterization, simulation, and device results.
Advanced crystal growth technology & equipment
Advanced OMVPE: novel materials & devices
Invited speaker:
-
James Grandusky, Crystal IS
Session description:
The Advanced Crystal Growth Technology and Equipment symposium is focused on advancements in the processes, equipment, materials, and characterization of crystals from epitaxy through bulk growth. This symposium welcomes contributions from all types of crystalline materials with a primary emphasis on manufacturing and industrialization. Speakers in this symposium are welcomed and encouraged to contribute from industrial, research or academic institutions presenting on the early stages of technology development and transfer to manufacturing as well as more mature technologies focusing on quality, repeatability, sustainability, and yield improvements. Speakers with innovative presentations from all stages of the value chain including raw material and equipment suppliers, process development and engineering, crystalline materials characterization methods and advanced data analysis are highly encouraged to participate in this symposium.
Invited speakers:
-
Theresa Saenz (NREL), "GaAs Solar Cells on V-groove Si substrates"
Session description:
This session explores all things novel: materials, heteroepitaxy, selective area epitaxy, nanostructures and devices. Abstracts from the broad OMVPE community are sought, ranging from exploratory development of new technologies to challenges facing industrial efforts and the solutions implemented. Abstracts focusing on growth, characterization or devices welcome.
Nanocrystals, quantum dots,
and nanowires
Biological and biomimetic materials
Invited speakers:
Prof. Robert Macfarlane
Massachusetts Institute of Technology
“Nanoparticle Assembly into Ordered Superlattices: When and Why these ‘Artificial Atoms’ Break Conventional Rules for Crystallization”
Dr. Matthew Brubaker
National Institute of Standards and Technology
“Selective Area Growth of N-polar GaN Nanostructures for Core-Shell Optoelectronic Devices”
Prof. Michael Filler
Georgia Institute of Technology
“Buckets of Transistors: Scalable Nanoelectronic Devices via Bottom-up Crystal Growth and Area-Selective Processes”
Session description:
Nanomaterials are important building blocks for many applications. Their synthesis frequently has to meet challenges such as obtaining well-defined size and shape distributions, controlling crystal structure, composition, positioning in arrays, defects, interface formation in heterostructures, etc. The symposium focuses on all aspects of the growth of nanomaterials, including:
-
Synthesis: Solution synthesis of nanocrystals and quantum dots; nanowire growth by VLS or other mechanisms;
-
In-situ studies of the growth of nanomaterials using microscopy, diffraction and other approaches;
-
Self-assembly of superstructures;
-
Lithographic or other definition of arrays of nanocrystals, quantum dots and nanowires;
-
Formation of heterostructures, such as core-shell, axial and mixed-dimensional nanowire heterostructures, core-shell nanoparticles, Janus particles, etc.;
-
Studies of the relationship between growth, structure, and properties;
-
In-operando modification of nanomaterials in gas or liquid environments;
-
Modification of nanomaterials by chemical reactions, ligand exchange, alloying, doping, etc.;
-
Defects, surfaces, faceting and interfaces in nanomaterials.
Invited speakers:
TBA
Session description:
This symposium is designed as a cross-disciplinary forum that will bring together a community broadly interested in the mechanisms by which organisms control phase transformations, impact those in the environment, and in the development of new approaches based on biological processes. Specific areas of interest include, but are not limited to crystallization pathways in organisms and in biogeochemical systems, the role of soft matter, bioinspired, and bio-enabled crystallization, and applications thereof in areas ranging from biomedicine to carbon sequestration. We recognize the importance of amorphous precursors in these processes and expressly invite contributions in this area. Contribution describing theoretical, computational, and experimental approaches are welcome, as are those describing the development of innovative tools and techniques. (shared from ACCGE-21/OMVPE-18)
III-V epitaxial growth for devices
Invited speakers:
TBA
Session description:
The III-V Epitaxial Growth for Devices symposium solicits papers on recent advances in the epitaxial growth of III/V materials for device application including; growth techniques for achieving novel device architectures or higher device performance levels, in-situ monitoring for device growth and manufacturing, studies regarding the impact of material and interfacial properties on device performance, device integration through growth, and the growth of emerging III/V materials for device applications (dilute-nitrides, dilute-bismides, etc.).
Materials for photovoltaics & other energy technologies
Invited speakers:
TBA
Session description:
This session focuses on the growth of crystalline materials for photovoltaics and other energy technologies, such as thermoelectrics and piezoelectric. Single- and poly-crystalline silicon devices currently dominate the rapidly growing photovoltaic industry, but perovskite, CdTe, CIGS, earth abundant thin films and high efficiency III-V solar cells are emerging materials for cost effective power generation. Novel materials and devices for power generation are encouraged topics for this session
Sixth symposium on 2d and low dimensional materials
Invited speakers:
TBA
Session description:
Research on the synthesis and the applications of various low-dimensional materials (0D, 1D, and layered 2D materials) are the themes of this symposium. The unique properties of these materials, differing or exceeding those of their bulk crystal counterparts, are of potential scientific and technological importance. Materials of central importance to this symposium include 2D layered materials such as graphene, boron nitride, transition metal dichalcogenides and oxides, topological insulators, superconductors, Xenes, etc., as well as their 0D and 1D counterparts, and various heterostructural combinations. Contributions towards the synthesis, properties, characterization, processing, and fascinating applications, including devices of these novel materials, are of interest. The goal of this symposium is to explore, through the contributions of leading researchers, new methodologies and breakthroughs in low-dimensional materials and identify constraining issues to future development.
III-V wide bandgap nitride
semiconductors and devices
Invited speakers:
TBA
Session description:
This symposium focuses on III-V Wide Bandgap Nitrides including GaN, AlN, BN and their alloys. Potential topics include design, growth, fabrication, and characterization of epilayers and devices. Devices of interest are optoelectronic devices (e.g., LEDs, laser, detectors), electronic devices (power electronic and switches), and novel devices/ systems (e.g., integrated photonics, phononics, nanostructures-based devices). Contributors are encouraged to link materials properties and device metrics. The goal of this symposium is to bring together researchers with different backgrounds and experience to explore pathways to enable next generation devices."
Silicon carbide & gallium oxide materials & devices
Fourth symposium on ferroelectric crystals & textured ceramics
Invited speakers:
-
Akito Kuramata (Novel Crystals)
-
Siddharth Rajan (Ohio State University)
Session description:
Wide bandgap semiconductors materials, silicon carbide and gallium oxide are paving the way for innovations in power electronic applications. Silicon carbide technologies have been developed for more than 30 years and is considered as an ideal choice of material for next generation power electronics while gallium oxide has garnered considerable interest in recent years. The symposium will cover all aspects of the development of both materials and provide information on the state-of-the-art. Topics covered will include bulk and thin film growth; structural and point defect characterization; defect engineering techniques; growth chamber design and modeling; doping and carrier lifetime control techniques; power device structures and fabrication technologies; device characterization and modeling.
Invited speakers:
TBA
Session description:
Outline:
-
Traditional piezoelectric crystals, including non-ferroelectric piezoelectric crystals
-
New trends (high performance relaxor based ferroelectrics)
-
Crystal growth technologies including solid state conversion and textured ceramics
-
Property characterization and understanding of the structure-property relationship
-
Application of piezoelectric/ferroelectric crystals
This symposium brings together materials researchers from academia and industry to present the latest advances in ferroelectric/piezoelectric materials, including synthesis, processing, and characterization of ferroelectric/piezoelectric single crystals and textured ceramics. The topics of interest also include structure/domain-property relationships, phase transitions, and performance improvement through innovative material processing, composition modification and/or defect chemistry. These materials have tremendous impact on a variety of technologies, including ultrasonic transducers, actuators, sensors, MEMS devices, and energy harvesting.
Proposed sessions for this symposium:
-
Fabrication, including crystal growth and texturing
-
Property characterization, including piezoelectric, ferroelectric and pyroelectric
-
Fundamental understanding of the microstructure- property relationship, including domain, domain wall, polar nanoregions
-
Applications of ferroelectric crystals, including transducers/sensor/actuator, MEMS, energy harvesting, thermal imaging, etc.
Characterization techniques for bulk & epitaxial crystallization
Invited speakers:
TBA
Session description:
Researchers from around the world will gather at ACCGE-23/OMVPE-21 at Tucson, AZ to share research with their colleagues who are actively engaged in advances in characterization techniques relevant to bulk and epitaxial crystallization. This symposium features presentations addressing issues of current and future interest, covering both theoretical and experimental work. Topics to be covered include advances in the understanding of the origin of defects in crystals, their behavior during and after the growth process and the influence of these defects on the performance of the particular intended device application. Featured will be presentations about state-of-the-art developments and applications where the complex nature of materials is recognized. Additionally, discussions are anticipated on the applications and possibilities for multi-technique measurements of interdependent parameters and the evaluation of the data through sophisticated computer analyses.
Symposium on nucleation and growth in microfluidics
Invited speakers:
TBA
Session description:
This last decade, microfluidics technology has proved its efficiency to study crystallization fundamentals in chemistry and biology. This symposium will give an opportunity to the crystal growth community to present and discuss about the latest advances in this field of research. Presentations and discussions will focus on experimental and theoretical aspect of phase separation and crystal growth studies.
Symposium on twisted crystals
Invited Speakers:
-
Dr. Prashant Kumar, University of Michigan, Department of Chemical Engineering
-
Professor Stephanie Lee, New York University, Department of Chemistry
Session description:
Crystals are straight by many definitions with sharp edges of flat faces characteristic of polyhedra. Increasingly it has been shown helicoidal morphologies are ubiquitous both at the nanoscale and even macroscale. Identifying the physical and chemical properties of such ensembles, and identifying the forces that give rise to non-classical morphologies characterizes the study of twisted crystals. Meanwhile, 2D crystals (i.e. graphene) as sometimes purposely assembled with a twist between layers give rise to unanticipated physics, or crystals can twist by virtue of applied photochemical or mechanical forces. Here, the twisting agent is not Nature but the Scientist, and that is OK too.
Boron nitride epitaxial growth & characterization symposium
Invited speakers:
TBA
Session description:
Boron nitride (BN) has recently emerged as a material of choice for a wide array of technologically important application areas including deep-UV optoelectronics, power/RF electronics, neutron detectors, single photon/electron emitters, and super-capacitors. BN exists in three different crystalline forms: hexagonal, cubic and wurtzite resulting in a wide range of material properties, quite in analogy to carbon taking on a wide range of extreme properties resulting from structures ranging from diamond to graphite to graphene. Despite BN’s exciting material properties, the full potential of BN has yet to be realized at scale due to challenges in its large area, high quality, reliable synthesis in the desired polymorph. A lack of native substrates requires sophisticated approaches to overcome challenges brought on by heteroepitaxial constraints. This symposium explores recent advances in boron nitride synthesis (all polymorphs) with a particular focus on its epitaxial growth. Resulting material properties and defects will be discussed along with general characterization of this material and determination of metrics to assess ‘quality’ of synthesized materials.
Symposium on detector materials: scintillators & semiconductors
Reduced gravity crystal
growth symposium
Invited speakers:
TBA
Session description:
This symposium covers a broad spectrum of recent developments in scintillators and semiconductors for various detector applications including, but not limited to, medical imaging, nuclear security, geophysical exploration, and high energy physics. The symposium addresses synthesis and detector performance of bulk single crystals, polycrystalline ceramics, nanocomposite scintillators, thin films, and hybrid organic-inorganic materials.
Invited Speaker:
-
Dr. Partha Dutta, United Semiconductors
Session description:
It has long been established that the force of gravity can influence heat and mass transfer processes that occur during crystal growth through effects such as buoyancy convection and sedimentation. Microgravity experimentation provides a means to study these effects in the near absence of gravitationally induced flows. This symposium will bring together researchers from academia, government and industry to disseminate information both on the results of crystal growth experiments in reduced gravity and on projects that are currently under development. Papers on ground-based results from experiments that are leading up to flight investigations are also welcome. Also encouraged are presentations of technology and hardware developments, as well as modeling efforts, particularly those that elucidate the effects of steady and non-steady (g-jitter) effects on crystal growth processes.
Narrow gap semiconductors
Invited speakers:
TBA
Session description:
The session will highlight various aspects of technology of materials and heterostructures with energy gaps smaller than that of silicon based on GeSn, Bi, InGaAs, InAsSb, HgCdTe, CIGS, chalcogenides and organic semiconductors for light emitting, sensing, energy harvesting, high speed electronics and quantum computing. The discussions will primarily center around advances in crystal growth, energy band engineering, quantum phenomena in novel materials and devices.